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Q74: Semiconducting Qubits I

Room 403/404

Sponsoring Units: DQIChair: Romain Maurand, CEA GrenobleSession Type:
  • Focus

Wed. March 8, 5:48 p.m. – 6:00 p.m. PST

Room 403/404

Strong spin-orbit coupling for holes in silicon gives rise to location and field orientation dependant g-factors. SOC is further enhanced for so-called flopping mode qubits where a single hole is electrically driven between two quantum dots with different g-factors, which converts the electrical drive into an effective magnetic drive in the reference frame of the hole allowing for efficient electric dipole spin resonance (EDSR) to be driven.

In this work, we confine a single hole between a boron atom and a multi-hole quantum dot in a single-gate p-type nanowire transistor. A superconducting off-chip microwave resonator coupled to the gate allows for both readout and EDSR drive. We perform magneto- and two-tone spectroscopy and find the signature of EDSR driven by both photons in the superconducting resonator and the MW tone. We find the EDSR signatures to be strongly field-angle dependant. Our work paves the way for the implementation of an all-electrical qubit in a single industry-standard transistor.

Presented By

  • Felix-Ekkehard von Horstig (University of Cambridge)

Authors

  • Felix-Ekkehard von Horstig (University of Cambridge)