Fri. March 8, 12:18 p.m. – 12:30 p.m. CST
205C
CaSnO3 stands out among alkaline-earth stannates due to its exceptionally wide bandgap of approximately 4.6 eV and its ability to be electron-doped. This presentation offers a comprehensive examination encompassing the growth process, structural characterization, and temperature-dependent electrical transport measurements of CaSnO3 films. These films were fabricated with carrier densities spanning from 3.3 × 1019 cm-3 to 1.6 × 1020 cm-3 using hybrid Molecular Beam Epitaxy (MBE). Notably, the films exhibited a room-temperature mobility of 42 cm2V-1s-1 at a carrier density of 3.3 × 1019 cm-3. Furthermore, we will explore the utilization of CaSnO3 as a wide bandgap spacer and its role in facilitating modulation doping in complex oxides.
Presented By
- Donghwan Kim (University of Minnesota)
Hybrid MBE Growth and Transport in CaSnO3-based Heterostructures
Fri. March 8, 12:18 p.m. – 12:30 p.m. CST
205C
Presented By
- Donghwan Kim (University of Minnesota)